IGB50N65H5ATMA1
IGB50N65H5ATMA1
Артикул:
IGB50N65H5ATMA1
Описание:
IGB50N65H5ATMA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IGB50N65H5ATMA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IGB50N65H5ATMA1: Биполярный транзистор с изолированным затвором