История:
BP420V112M-WT-1000
BP420V105M-WT-1000
010629
BP420V103M-WT-1000
024298
BP420V110M-WT-1000
BP420V112M-WT-0000
BP420V105M-WT-0000
BP420V103M-WT-0000
BP420H209M-WT-0001
BP420V110M-WT-0000
BP420V109M-WT-1000
BP420V204M-WT-0000
BP420H211M-WT-0001
BP420H210M-WT-0001
0034.3127.PT
BP420H209M-WT-0002
BP420V108M-WT-0000
0034.3127
BP420V203M-WT-0000
IGP20N60H3
IGP20N60H3
Артикул:
Описание:
IGP20N60H3
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
170 W
Описание
Insulated-gate bipolar transistor-IGP20N60H3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
170 W
Описание
Insulated-gate bipolar transistor-IGP20N60H3: Биполярный транзистор с изолированным затвором