IGP20N65H5
IGP20N65H5
Артикул:
IGP20N65H5
Описание:
IGP20N65H5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
42 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-IGP20N65H5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
42 A
Power Dispation
125 W
Описание
Insulated-gate bipolar transistor-IGP20N65H5: Биполярный транзистор с изолированным затвором