IGP30N65F5
IGP30N65F5
Артикул:
IGP30N65F5
Описание:
IGP30N65F5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
55 A
Power Dispation
188 W
Описание
Insulated-gate bipolar transistor-IGP30N65F5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
55 A
Power Dispation
188 W
Описание
Insulated-gate bipolar transistor-IGP30N65F5: Биполярный транзистор с изолированным затвором