IGP50N60TXKSA1
IGP50N60TXKSA1
Артикул:
IGP50N60TXKSA1
Описание:
IGP50N60TXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
90 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IGP50N60TXKSA1: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
90 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IGP50N60TXKSA1: Биполярный транзистор с изолированным затвором