IGW08T120
IGW08T120
Артикул:
IGW08T120
Описание:
IGW08T120
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
70 W
Описание
Insulated-gate bipolar transistor-IGW08T120: Биполярный транзистор с изолированным затвором
В наличии
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
70 W
Описание
Insulated-gate bipolar transistor-IGW08T120: Биполярный транзистор с изолированным затвором