История:
MPLAD6.5KP11CA/TR
IGW25T120
IGW25T120
Артикул:
IGW25T120
Описание:
IGW25T120
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IGW25T120: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IGW25T120: Биполярный транзистор с изолированным затвором

