IGW30N60TPXKSA1
IGW30N60TPXKSA1
Артикул:
IGW30N60TPXKSA1
Описание:
IGW30N60TPXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
53 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IGW30N60TPXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
53 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IGW30N60TPXKSA1: Биполярный транзистор с изолированным затвором