IGW40N120H3
IGW40N120H3
Артикул:
IGW40N120H3
Описание:
IGW40N120H3
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
483 W
Описание
Insulated-gate bipolar transistor-IGW40N120H3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.05 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
483 W
Описание
Insulated-gate bipolar transistor-IGW40N120H3: Биполярный транзистор с изолированным затвором