IGW40T120
IGW40T120
Артикул:
IGW40T120
Описание:
IGW40T120
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IGW40T120: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IGW40T120: Биполярный транзистор с изолированным затвором