IGW75N65H5XKSA1
IGW75N65H5XKSA1
Артикул:
IGW75N65H5XKSA1
Описание:
IGW75N65H5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
395 W
Описание
Insulated-gate bipolar transistor-IGW75N65H5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
120 A
Power Dispation
395 W
Описание
Insulated-gate bipolar transistor-IGW75N65H5XKSA1: Биполярный транзистор с изолированным затвором