IGZ100N65H5XKSA1
IGZ100N65H5XKSA1
Артикул:
IGZ100N65H5XKSA1
Описание:
IGZ100N65H5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
161 A
Power Dispation
536 W
Описание
Insulated-gate bipolar transistor-IGZ100N65H5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
161 A
Power Dispation
536 W
Описание
Insulated-gate bipolar transistor-IGZ100N65H5XKSA1: Биполярный транзистор с изолированным затвором