IHW15N120R3FKSA1
IHW15N120R3FKSA1
Артикул:
IHW15N120R3FKSA1
Описание:
IHW15N120R3FKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.48 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
254 W
Описание
Insulated-gate bipolar transistor-IHW15N120R3FKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.48 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
254 W
Описание
Insulated-gate bipolar transistor-IHW15N120R3FKSA1: Биполярный транзистор с изолированным затвором