IHW20N65R5
IHW20N65R5
Артикул:
IHW20N65R5
Описание:
IHW20N65R5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IHW20N65R5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IHW20N65R5: Биполярный транзистор с изолированным затвором