IHW25N120E1XKSA1
IHW25N120E1XKSA1
Артикул:
IHW25N120E1XKSA1
Описание:
IHW25N120E1XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-IHW25N120E1XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
231 W
Описание
Insulated-gate bipolar transistor-IHW25N120E1XKSA1: Биполярный транзистор с изолированным затвором