IHW30N110R3FKSA1
IHW30N110R3FKSA1
Артикул:
IHW30N110R3FKSA1
Описание:
IHW30N110R3FKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1100 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IHW30N110R3FKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1100 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IHW30N110R3FKSA1: Биполярный транзистор с изолированным затвором