IHW30N135R5XKSA1
IHW30N135R5XKSA1
Артикул:
Описание:
IHW30N135R5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1350 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
330 W
Описание
Insulated-gate bipolar transistor-IHW30N135R5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1350 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
330 W
Описание
Insulated-gate bipolar transistor-IHW30N135R5XKSA1: Биполярный транзистор с изолированным затвором