IHW40N60RF
IHW40N60RF
Артикул:
IHW40N60RF
Описание:
IHW40N60RF
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
305 W
Описание
Insulated-gate bipolar transistor-IHW40N60RF: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
305 W
Описание
Insulated-gate bipolar transistor-IHW40N60RF: Биполярный транзистор с изолированным затвором