IHW50N65R5
IHW50N65R5
Артикул:
Описание:
IHW50N65R5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
282 W
Описание
Insulated-gate bipolar transistor-IHW50N65R5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
282 W
Описание
Insulated-gate bipolar transistor-IHW50N65R5: Биполярный транзистор с изолированным затвором