IHW50N65R5XKSA1
IHW50N65R5XKSA1
Артикул:
IHW50N65R5XKSA1
Описание:
IHW50N65R5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
282 W
Описание
Insulated-gate bipolar transistor-IHW50N65R5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
282 W
Описание
Insulated-gate bipolar transistor-IHW50N65R5XKSA1: Биполярный транзистор с изолированным затвором