IKA08N65ET6XKSA1
IKA08N65ET6XKSA1
Артикул:
Описание:
IKA08N65ET6XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11 A
Power Dispation
33 W
Описание
Insulated-gate bipolar transistor-IKA08N65ET6XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
11 A
Power Dispation
33 W
Описание
Insulated-gate bipolar transistor-IKA08N65ET6XKSA1: Биполярный транзистор с изолированным затвором