История:
PIC32MX170F512L-V/PF
TLC3702CPSRG4
IKA08N65H5XKSA1
IKA08N65H5XKSA1
Артикул:
Описание:
IKA08N65H5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10.8 A
Power Dispation
31.2 W
Описание
Insulated-gate bipolar transistor-IKA08N65H5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10.8 A
Power Dispation
31.2 W
Описание
Insulated-gate bipolar transistor-IKA08N65H5XKSA1: Биполярный транзистор с изолированным затвором

