IKA10N65ET6XKSA2
IKA10N65ET6XKSA2
Артикул:
Описание:
IKA10N65ET6XKSA2
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
40 W
Описание
Insulated-gate bipolar transistor-IKA10N65ET6XKSA2: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
15 A
Power Dispation
40 W
Описание
Insulated-gate bipolar transistor-IKA10N65ET6XKSA2: Биполярный транзистор с изолированным затвором