IKB10N60T
IKB10N60T
Артикул:
Описание:
IKB10N60T
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
110 W
Описание
Insulated-gate bipolar transistor-IKB10N60T: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
24 A
Power Dispation
110 W
Описание
Insulated-gate bipolar transistor-IKB10N60T: Биполярный транзистор с изолированным затвором