IKB20N60TAATMA1
IKB20N60TAATMA1
Артикул:
Описание:
IKB20N60TAATMA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
156 W
Описание
Insulated-gate bipolar transistor-IKB20N60TAATMA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
156 W
Описание
Insulated-gate bipolar transistor-IKB20N60TAATMA1: Биполярный транзистор с изолированным затвором