IKD04N60RAATMA1
IKD04N60RAATMA1
Артикул:
IKD04N60RAATMA1
Описание:
IKD04N60RAATMA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
8 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IKD04N60RAATMA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
8 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IKD04N60RAATMA1: Биполярный транзистор с изолированным затвором