IKD10N60RFATMA1
IKD10N60RFATMA1
Артикул:
IKD10N60RFATMA1
Описание:
IKD10N60RFATMA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IKD10N60RFATMA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IKD10N60RFATMA1: Биполярный транзистор с изолированным затвором