История:
PL135-67QC-R
IKFW40N60DH3EXKSA1
IKFW40N60DH3EXKSA1
Артикул:
Описание:
IKFW40N60DH3EXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
34 A
Power Dispation
111 W
Описание
Insulated-gate bipolar transistor-IKFW40N60DH3EXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
34 A
Power Dispation
111 W
Описание
Insulated-gate bipolar transistor-IKFW40N60DH3EXKSA1: Биполярный транзистор с изолированным затвором

