IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1
Артикул:
IKFW50N60DH3EXKSA1
Описание:
IKFW50N60DH3EXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
40 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IKFW50N60DH3EXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
40 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IKFW50N60DH3EXKSA1: Биполярный транзистор с изолированным затвором