IKFW50N60DH3XKSA1
IKFW50N60DH3XKSA1
Артикул:
Описание:
IKFW50N60DH3XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
53 A
Power Dispation
145 W
Описание
Insulated-gate bipolar transistor-IKFW50N60DH3XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
30 V
Continuous Collector Current at 25 C
53 A
Power Dispation
145 W
Описание
Insulated-gate bipolar transistor-IKFW50N60DH3XKSA1: Биполярный транзистор с изолированным затвором