IKFW60N60EH3XKSA1
IKFW60N60EH3XKSA1
Артикул:
Описание:
IKFW60N60EH3XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
63 A
Power Dispation
164 W
Описание
Insulated-gate bipolar transistor-IKFW60N60EH3XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
63 A
Power Dispation
164 W
Описание
Insulated-gate bipolar transistor-IKFW60N60EH3XKSA1: Биполярный транзистор с изолированным затвором