IKP08N65H5
IKP08N65H5
Артикул:
IKP08N65H5
Описание:
IKP08N65H5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
18 A
Power Dispation
70 W
Описание
Insulated-gate bipolar transistor-IKP08N65H5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
18 A
Power Dispation
70 W
Описание
Insulated-gate bipolar transistor-IKP08N65H5: Биполярный транзистор с изолированным затвором