История:
C8051F042-GQR
10AX090U2F45I2SG
IKP15N65H5XKSA1
IKP15N65H5XKSA1
Артикул:
Описание:
IKP15N65H5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
105 W
Описание
Insulated-gate bipolar transistor-IKP15N65H5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
105 W
Описание
Insulated-gate bipolar transistor-IKP15N65H5XKSA1: Биполярный транзистор с изолированным затвором

