История:
E56/24/19-3C92-G2000
IKP28N65ES5XKSA1
IKP28N65ES5XKSA1
Артикул:
Описание:
IKP28N65ES5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
38 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IKP28N65ES5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
38 A
Power Dispation
130 W
Описание
Insulated-gate bipolar transistor-IKP28N65ES5XKSA1: Биполярный транзистор с изолированным затвором

