IKQ120N60TXKSA1
IKQ120N60TXKSA1
Артикул:
IKQ120N60TXKSA1
Описание:
IKQ120N60TXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
833 W
Описание
Insulated-gate bipolar transistor-IKQ120N60TXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
833 W
Описание
Insulated-gate bipolar transistor-IKQ120N60TXKSA1: Биполярный транзистор с изолированным затвором