IKQ40N120CT2XKSA1
IKQ40N120CT2XKSA1
Артикул:
IKQ40N120CT2XKSA1
Описание:
IKQ40N120CT2XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IKQ40N120CT2XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IKQ40N120CT2XKSA1: Биполярный транзистор с изолированным затвором