IKQ50N120CH3XKSA1
IKQ50N120CH3XKSA1
Артикул:
IKQ50N120CH3XKSA1
Описание:
IKQ50N120CH3XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
652 W
Описание
Insulated-gate bipolar transistor-IKQ50N120CH3XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
652 W
Описание
Insulated-gate bipolar transistor-IKQ50N120CH3XKSA1: Биполярный транзистор с изолированным затвором