IKQ75N120CS6XKSA1
IKQ75N120CS6XKSA1
Артикул:
IKQ75N120CS6XKSA1
Описание:
IKQ75N120CS6XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
880 W
Описание
Insulated-gate bipolar transistor-IKQ75N120CS6XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
150 A
Power Dispation
880 W
Описание
Insulated-gate bipolar transistor-IKQ75N120CS6XKSA1: Биполярный транзистор с изолированным затвором