IKW15N120BH6XKSA1
IKW15N120BH6XKSA1
Артикул:
IKW15N120BH6XKSA1
Описание:
IKW15N120BH6XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IKW15N120BH6XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IKW15N120BH6XKSA1: Биполярный транзистор с изолированным затвором