IKW15N120T2
IKW15N120T2
Артикул:
IKW15N120T2
Описание:
IKW15N120T2
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
235 W
Описание
Insulated-gate bipolar transistor-IKW15N120T2: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
235 W
Описание
Insulated-gate bipolar transistor-IKW15N120T2: Биполярный транзистор с изолированным затвором