История:
STM32L562VET6Q
IKW20N60T
IKW20N60T
Артикул:
Описание:
IKW20N60T
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
166 W
Описание
Insulated-gate bipolar transistor-IKW20N60T: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
166 W
Описание
Insulated-gate bipolar transistor-IKW20N60T: Биполярный транзистор с изолированным затвором

