IKW25T120FKSA1
IKW25T120FKSA1
Артикул:
IKW25T120FKSA1
Описание:
IKW25T120FKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IKW25T120FKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IKW25T120FKSA1: Биполярный транзистор с изолированным затвором