IKW30N60TFKSA1
IKW30N60TFKSA1
Артикул:
IKW30N60TFKSA1
Описание:
IKW30N60TFKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
45 A
Power Dispation
187 W
Описание
Insulated-gate bipolar transistor-IKW30N60TFKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
45 A
Power Dispation
187 W
Описание
Insulated-gate bipolar transistor-IKW30N60TFKSA1: Биполярный транзистор с изолированным затвором