IKW30N65ES5
IKW30N65ES5
Артикул:
IKW30N65ES5
Описание:
IKW30N65ES5
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
62 A
Power Dispation
188 W
Описание
Insulated-gate bipolar transistor-IKW30N65ES5: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
62 A
Power Dispation
188 W
Описание
Insulated-gate bipolar transistor-IKW30N65ES5: Биполярный транзистор с изолированным затвором