IKW30N65WR5XKSA1
IKW30N65WR5XKSA1
Артикул:
Описание:
IKW30N65WR5XKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
185 W
Описание
Insulated-gate bipolar transistor-IKW30N65WR5XKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
185 W
Описание
Insulated-gate bipolar transistor-IKW30N65WR5XKSA1: Биполярный транзистор с изолированным затвором