IKW40N120T2FKSA1
IKW40N120T2FKSA1
Артикул:
IKW40N120T2FKSA1
Описание:
IKW40N120T2FKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
480 W
Описание
Insulated-gate bipolar transistor-IKW40N120T2FKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
480 W
Описание
Insulated-gate bipolar transistor-IKW40N120T2FKSA1: Биполярный транзистор с изолированным затвором