IKW40N60DTPXKSA1
IKW40N60DTPXKSA1
Артикул:
IKW40N60DTPXKSA1
Описание:
IKW40N60DTPXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
67 A
Power Dispation
246 W
Описание
Insulated-gate bipolar transistor-IKW40N60DTPXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
67 A
Power Dispation
246 W
Описание
Insulated-gate bipolar transistor-IKW40N60DTPXKSA1: Биполярный транзистор с изолированным затвором