IKW50N60DTPXKSA1
IKW50N60DTPXKSA1
Артикул:
IKW50N60DTPXKSA1
Описание:
IKW50N60DTPXKSA1
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
319.2 W
Описание
Insulated-gate bipolar transistor-IKW50N60DTPXKSA1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
319.2 W
Описание
Insulated-gate bipolar transistor-IKW50N60DTPXKSA1: Биполярный транзистор с изолированным затвором