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IKW50N60T
IKW50N60T
Артикул:
IKW50N60T
Описание:
IKW50N60T
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IKW50N60T: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IKW50N60T: Биполярный транзистор с изолированным затвором