IKW50N60TA
IKW50N60TA
Артикул:
IKW50N60TA
Описание:
IKW50N60TA
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IKW50N60TA: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
Infineon
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
80 A
Power Dispation
333 W
Описание
Insulated-gate bipolar transistor-IKW50N60TA: Биполярный транзистор с изолированным затвором